FJP13009H2
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- Mfr.Part #
- FJP13009H2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 12,651
- In Stock ：
- 12,651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Power Dissipation :
- 100W
- Transition Frequency :
- 4MHz
- Max Power Dissipation :
- 100W
- Number of Pins :
- 3
- Frequency :
- 4MHz
- Width :
- 4.5mm
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 700V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 9V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 1.8g
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- hFE Min :
- 6
- Max Collector Current :
- 12A
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1V
- Voltage - Rated DC :
- 400V
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 12A
- Factory Lead Time :
- 8 Weeks
- Height :
- 9.2mm
- Base Part Number :
- FJP13009
- Gain Bandwidth Product :
- 4MHz
- Length :
- 9.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Published :
- 2017
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FJP13009H2
FJP13009H2 Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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