FJP13009H2

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Mfr.Part #
FJP13009H2
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 12A TO220-3
Stock
12,651
In Stock :
12,651

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.8g
JEDEC-95 Code :
TO-220AB
Width :
4.5mm
Number of Elements :
1
Collector Emitter Breakdown Voltage :
400V
Transistor Type :
NPN
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
3V @ 3A, 12A
Radiation Hardening :
No
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Base Part Number :
FJP13009
Number of Pins :
3
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pbfree Code :
yes
Max Power Dissipation :
100W
Frequency :
4MHz
Polarity/Channel Type :
NPN
Voltage - Rated DC :
400V
Gain Bandwidth Product :
4MHz
ECCN Code :
EAR99
Current Rating :
12A
Emitter Base Voltage (VEBO) :
9V
Packaging :
Tube
hFE Min :
6
RoHS Status :
ROHS3 Compliant
Power Dissipation :
100W
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 5A 5V
Mount :
Through Hole
Length :
9.9mm
Transition Frequency :
4MHz
Package / Case :
TO-220-3
Max Collector Current :
12A
Factory Lead Time :
8 Weeks
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
400V
Height :
9.2mm
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
1V
Published :
2017
Collector Base Voltage (VCBO) :
700V
Datasheets
FJP13009H2
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP13009H2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:FJP13009, Number of Pins:3, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, FJP13009H2 pinout, FJP13009H2 datasheet PDF, FJP13009H2 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP13009H2 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP13009H2


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP13009H2TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.

FJP13009H2TU Features


the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz


FJP13009H2TU Applications


There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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