FJP13009H2TU
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- Mfr.Part #
- FJP13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 2,058
- In Stock ：
- 2,058
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 400V
- Weight :
- 1.8g
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- FJP13009
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Emitter Base Voltage (VEBO) :
- 9V
- ECCN Code :
- EAR99
- Frequency :
- 4MHz
- Transistor Element Material :
- SILICON
- Width :
- 4.5mm
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Power Dissipation :
- 100W
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Height :
- 9.2mm
- Max Collector Current :
- 12A
- Collector Base Voltage (VCBO) :
- 700V
- hFE Min :
- 6
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Collector Emitter Voltage (VCEO) :
- 400V
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- Length :
- 9.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Current Rating :
- 12A
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 4MHz
- Max Power Dissipation :
- 100W
- Datasheets
- FJP13009H2TU
FJP13009H2TU Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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