FJP13009H2TU
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- Mfr.Part #
- FJP13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 2,058
- In Stock ：
- 2,058
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 6
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Height :
- 9.2mm
- Power Dissipation :
- 100W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 400V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 4MHz
- Pbfree Code :
- yes
- Base Part Number :
- FJP13009
- Package / Case :
- TO-220-3
- Length :
- 9.9mm
- Collector Emitter Breakdown Voltage :
- 400V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Weight :
- 1.8g
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Width :
- 4.5mm
- Number of Elements :
- 1
- Max Collector Current :
- 12A
- Current Rating :
- 12A
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 100W
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Published :
- 2017
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Frequency :
- 4MHz
- Element Configuration :
- Single
- Voltage - Rated DC :
- 400V
- Transition Frequency :
- 4MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Datasheets
- FJP13009H2TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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