FJP13007H2TU-F080

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Mfr.Part #
FJP13007H2TU-F080
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220-3
Stock
14,144
In Stock :
14,144

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
8A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Number of Terminations :
3
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
80W
Reach Compliance Code :
Compliant
Packaging :
Tube
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Voltage - Collector Emitter Breakdown (Max) :
400V
Surface Mount :
No
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Power - Max :
80W
JESD-609 Code :
e3
Frequency - Transition :
4MHz
Transition Frequency :
4MHz
Terminal Position :
Single
Datasheets
FJP13007H2TU-F080
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP13007H2TU-F080 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, FJP13007H2TU-F080 pinout, FJP13007H2TU-F080 datasheet PDF, FJP13007H2TU-F080 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP13007H2TU-F080 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP13007H2TU-F080


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP13007H2TU-F080 Overview


In this device, the DC current gain is 8 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.4MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 400V.

FJP13007H2TU-F080 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
a transition frequency of 4MHz


FJP13007H2TU-F080 Applications


There are a lot of ON Semiconductor
FJP13007H2TU-F080 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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