FJP13007TU
- Mfr.Part #
- FJP13007TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220-3
- Stock
- 23,700
- In Stock :
- 23,700
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Packaging :
- Tube
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Length :
- 10.67mm
- Current Rating :
- 8A
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Voltage - Rated DC :
- 400V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power Dissipation :
- 80W
- Max Power Dissipation :
- 80W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Transition Frequency :
- 4MHz
- Published :
- 2011
- Width :
- 4.83mm
- Weight :
- 1.8g
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Base Part Number :
- FJP13007
- Height :
- 9.4mm
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 4MHz
- Max Collector Current :
- 8A
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- hFE Min :
- 5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Base Voltage (VCBO) :
- 700V
- Frequency :
- 4MHz
- Datasheets
- FJP13007TU
FJP13007TU Documents

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13007TU Overview
In this device, the DC current gain is 5 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).4MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
FJP13007TU Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz
FJP13007TU Applications
There are a lot of ON Semiconductor
FJP13007TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJP13007 | onsemi | 10,134 | TRANS NPN 400V 8A TO220-3 |
| FJP13007H1 | onsemi | 39,248 | TRANS NPN 400V 8A TO220-3 |
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| FJP13007H1TU | onsemi | 43,319 | TRANS NPN 400V 8A TO220-3 |
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