FJP13007H1TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

RoHS Compliant

hFE Min :

5

Collector Emitter Voltage (VCEO) :

400V

Max Collector Current :

8A

Emitter Base Voltage (VEBO) :

9V

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

700V

Radiation Hardening :

No

Weight :

1.214g

Current Rating :

8A

Transition Frequency :

4MHz

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1V

Max Power Dissipation :

80W

Mount :

Through Hole

Base Part Number :

FJP13007

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Published :

2011

Voltage - Rated DC :

400V

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 2A 5V

Number of Terminations :

3

Element Configuration :

Single

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Frequency :

4MHz

Transistor Element Material :

SILICON

Power Dissipation :

80W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Factory Lead Time :

15 Weeks

Operating Temperature :

150°C TJ

Number of Pins :

3

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

400V

Gain Bandwidth Product :

4MHz