FJP13007H1TU
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- Mfr.Part #
- FJP13007H1TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220-3
- Stock
- 43,319
- In Stock ：
- 43,319
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 700V
- Power Dissipation :
- 80W
- Weight :
- 1.214g
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 400V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 4MHz
- Max Power Dissipation :
- 80W
- Polarity/Channel Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Emitter Base Voltage (VEBO) :
- 9V
- Element Configuration :
- Single
- Current Rating :
- 8A
- Max Collector Current :
- 8A
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 400V
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Published :
- 2011
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Packaging :
- Tube
- hFE Min :
- 5
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Frequency :
- 4MHz
- Base Part Number :
- FJP13007
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- Transition Frequency :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 2A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- FJP13007H1TU
FJP13007H1TU Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13007H1TU Overview
DC current gain in this device equals 15 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 2A, 8A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 8A volts.
FJP13007H1TU Features
the DC current gain for this device is 15 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz
FJP13007H1TU Applications
There are a lot of ON Semiconductor
FJP13007H1TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJP13007 | onsemi | 10,134 | TRANS NPN 400V 8A TO220-3 |
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| FJP13007H1TU | onsemi | 48,536 | TRANS NPN 400V 8A TO220-3 |
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