FJP13009TU
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- Mfr.Part #
- FJP13009TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 4,088
- In Stock ：
- 4,088
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Height :
- 16.51mm
- Packaging :
- Tube
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Width :
- 4.83mm
- Published :
- 2017
- Weight :
- 1.8g
- Max Power Dissipation :
- 100W
- Frequency :
- 4MHz
- Current Rating :
- 12A
- Collector Emitter Voltage (VCEO) :
- 400V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- hFE Min :
- 6
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 4MHz
- Power Dissipation :
- 100W
- Mounting Type :
- Through Hole
- Transition Frequency :
- 4MHz
- Base Part Number :
- FJP13009
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 12A
- Length :
- 10.67mm
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FJP13009TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJP13009H2TU | onsemi | 2,058 | TRANS NPN 400V 12A TO220-3 |
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