FJP13007H2TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

80W

Transistor Type :

NPN

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Collector Base Voltage (VCBO) :

700V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Collector Emitter Saturation Voltage :

1V

Max Collector Current :

8A

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

400V

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

26 @ 2A 5V

Number of Elements :

1

Frequency :

4MHz

Collector Emitter Breakdown Voltage :

400V

Polarity/Channel Type :

NPN

Number of Pins :

3

Gain Bandwidth Product :

4MHz

Current Rating :

8A

Emitter Base Voltage (VEBO) :

9V

Packaging :

Tube

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Operating Temperature :

150°C TJ

Weight :

1.8g

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

400V

Base Part Number :

FJP13007

Published :

2011

JEDEC-95 Code :

TO-220AB

Power Dissipation :

80W

hFE Min :

5

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

4MHz

Package / Case :

TO-220-3

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant