FJP13009
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- Mfr.Part #
- FJP13009
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 14,339
- In Stock ：
- 14,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- hFE Min :
- 6
- Length :
- 10.67mm
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 16.51mm
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 700V
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Breakdown Voltage :
- 400V
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Gain Bandwidth Product :
- 4MHz
- Base Part Number :
- FJP13009
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 4MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Frequency :
- 4MHz
- Factory Lead Time :
- 4 Weeks
- Published :
- 2017
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Current Rating :
- 12A
- Max Collector Current :
- 12A
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Width :
- 4.83mm
- Power Dissipation :
- 100W
- Max Power Dissipation :
- 100W
- Number of Pins :
- 3
- Weight :
- 1.8g
- Collector Emitter Saturation Voltage :
- 1V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJP13009
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJP13007H2TU | onsemi | 282,741 | TRANS NPN 400V 8A TO220-3 |
| FJP13007H2TU-F080 | onsemi | 18,001 | TRANS NPN 400V 8A TO220-3 |
| FJP13007H2TU-F080 | onsemi | 14,144 | TRANS NPN 400V 8A TO220-3 |
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| FJP13009 | onsemi | 14,339 | TRANS NPN 400V 12A TO220-3 |
| FJP13009H2 | onsemi | 12,651 | TRANS NPN 400V 12A TO220-3 |
| FJP13009H2TU | onsemi | 2,058 | TRANS NPN 400V 12A TO220-3 |
| FJP13009TU | onsemi | 4,088 | TRANS NPN 400V 12A TO220-3 |
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