FJP13009
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- Mfr.Part #
- FJP13009
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 14,339
- In Stock ：
- 14,339
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 12A
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Base Part Number :
- FJP13009
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- hFE Min :
- 6
- Operating Temperature :
- 150°C TJ
- Frequency :
- 4MHz
- Voltage - Rated DC :
- 400V
- Max Power Dissipation :
- 100W
- Published :
- 2017
- Weight :
- 1.8g
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 4MHz
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Max Collector Current :
- 12A
- Height :
- 16.51mm
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Collector Base Voltage (VCBO) :
- 700V
- Number of Elements :
- 1
- Power Dissipation :
- 100W
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Pins :
- 3
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83mm
- ECCN Code :
- EAR99
- Length :
- 10.67mm
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 4MHz
- Datasheets
- FJP13009
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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