FJP13007H2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

9V

Max Collector Current :

8A

Collector Base Voltage (VCBO) :

700V

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

26 @ 2A 5V

Max Power Dissipation :

80W

Transistor Element Material :

SILICON

Frequency :

4MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Collector Emitter Voltage (VCEO) :

400V

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Lead Free :

Lead Free

Pbfree Code :

yes

Number of Elements :

1

Operating Temperature :

150°C TJ

hFE Min :

5

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Weight :

1.8g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Packaging :

Tube

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Transition Frequency :

4MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gain Bandwidth Product :

4MHz

Mount :

Through Hole

Number of Terminations :

3

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

1V

Power Dissipation :

80W

RoHS Status :

ROHS3 Compliant

Published :

2011

Number of Pins :

3

Voltage - Rated DC :

400V

Current Rating :

8A

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

400V

ECCN Code :

EAR99

Base Part Number :

FJP13007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)