FJP13007H1TU-F080

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Mfr.Part #
FJP13007H1TU-F080
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220-3
Stock
1,546
In Stock :
1,546

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
8A
Mount :
Through Hole
Published :
2017
Configuration :
Single
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Weight :
1.8g
Number of Terminations :
3
Power Dissipation-Max (Abs) :
80W
Voltage - Collector Emitter Breakdown (Max) :
400V
Frequency - Transition :
4MHz
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power - Max :
80W
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSFM-T3
hFE Min :
5
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Collector Base Voltage (VCBO) :
700V
Emitter Base Voltage (VEBO) :
9V
Transition Frequency :
4MHz
Packaging :
Tube
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Transistor Application :
SWITCHING
Datasheets
FJP13007H1TU-F080
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP13007H1TU-F080 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, FJP13007H1TU-F080 pinout, FJP13007H1TU-F080 datasheet PDF, FJP13007H1TU-F080 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP13007H1TU-F080 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP13007H1TU-F080


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP13007H1TU-F080 Overview


This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 2A, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.As you can see, the part has a transition frequency of 4MHz.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.

FJP13007H1TU-F080 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


FJP13007H1TU-F080 Applications


There are a lot of ON Semiconductor
FJP13007H1TU-F080 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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