FGH30T65UPDT_F155

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

650V

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Switching Energy :

760μJ (on), 400μJ (off)

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Gate Charge :

155nC

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate-Emitter Thr Voltage-Max :

7.5V

Mount :

Through Hole

Factory Lead Time :

4 Weeks

Element Configuration :

Single

IGBT Type :

Trench Field Stop

Reach Compliance Code :

not_compliant

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

170 ns

Pbfree Code :

yes

Reverse Recovery Time :

43 ns

Turn On Time :

52 ns

Collector Emitter Voltage (VCEO) :

650V

Collector Emitter Saturation Voltage :

2.1V

JEDEC-95 Code :

TO-247AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

22ns/139ns

Power - Max :

250W

Package / Case :

TO-247-3

Gate-Emitter Voltage-Max :

20V

Weight :

6.39g

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Mounting Type :

Through Hole

Terminal Finish :

Tin

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

90A

Test Condition :

400V, 30A, 8 Ω, 15V

Transistor Application :

POWER CONTROL

Max Collector Current :

60A

Published :

2016

Number of Terminations :

3

Max Power Dissipation :

250W