FGH30N6S2D
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- Mfr.Part #
- FGH30N6S2D
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 45A 167W TO247
- Stock
- 38,205
- In Stock ：
- 38,205
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Max Power Dissipation :
- 167W
- Power Dissipation :
- 167W
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Td (on/off) @ 25°C :
- 6ns/40ns
- Test Condition :
- 390V, 12A, 10Ohm, 15V
- Input Type :
- Standard
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 167W
- Current Rating :
- 45A
- Package / Case :
- TO-247-3
- Max Operating Temperature :
- 150°C
- Polarity :
- NPN
- Max Collector Current :
- 45A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-247-3
- Min Operating Temperature :
- -55°C
- Collector Emitter Saturation Voltage :
- 2.5V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Current - Collector Pulsed (Icm) :
- 108A
- Packaging :
- Tube
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 12A
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 45A
- Element Configuration :
- Single
- Switching Energy :
- 55μJ (on), 100μJ (off)
- Reverse Recovery Time :
- 46 ns
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 600V
- Gate Charge :
- 23nC
- Rise Time :
- 17ns
- Datasheets
- FGH30N6S2D
FGH30N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30N6S2D Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, and Low Plateau Voltage SMPS II IGBTs combine the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.
FGH30N6S2D Features
100kHz Operation at 390V, 14A
200kHZ Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. ........90nsatTJ= 125%C
Low Gate Charge... 23nC at Vce= 15V
Low Plateau Village ......... .6.5V Typical
UIS Rated
150mJ
Low Conduction Loss
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