FGH30S150P

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Mfr.Part #
FGH30S150P
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
FGH30S150P - IGBT, 1500 V, 30 A
Stock
31,177
In Stock :
31,177

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Reach Compliance Code :
not_compliant
Current - Collector Pulsed (Icm) :
90A
Max Collector Current :
60A
Number of Terminations :
3
Terminal Position :
Single
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
4 Weeks
Gate Charge :
369nC
Pbfree Code :
yes
Packaging :
Tube
Transistor Application :
POWER CONTROL
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AB
Transistor Element Material :
SILICON
Turn On Time :
372 ns
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 30A
Collector Emitter Voltage (VCEO) :
2.4V
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
Collector Emitter Breakdown Voltage :
1.5kV
Weight :
6.39g
Input Type :
Standard
Td (on/off) @ 25°C :
32ns/492ns
ECCN Code :
EAR99
Switching Energy :
1.16mJ (on), 900μJ (off)
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e3
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn Off Time-Nom (toff) :
1080 ns
Test Condition :
600V, 30A, 10 Ω, 15V
Terminal Finish :
Tin (Sn)
HTS Code :
8541.29.00.95
Published :
2016
Max Power Dissipation :
500W
Voltage - Collector Emitter Breakdown (Max) :
1500V
Power - Max :
500W
Number of Elements :
1
Datasheets
FGH30S150P
Introducing Transistors - IGBTs - Single onsemi FGH30S150P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, FGH30S150P pinout, FGH30S150P datasheet PDF, FGH30S150P amp .Beyond Transistors - IGBTs - Single onsemi FGH30S150P ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH30S150P


FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH30S150P Description


FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.



FGH30S150P Features


  • High Speed Switching

  • Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A

  • High Input Impedance

  • Pb?Free and RoHS Compliant

  • Max Power Dissipation: 500 W

  • Max Collector Current: 60 A

  • Turn On Time: 372 ns

  • ROHS3 Compliant



FGH30S150P Applications


  • Power Control

  • Induction Heating

  • Microwave Oven

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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