FGH30S150P
- Mfr.Part #
- FGH30S150P
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- FGH30S150P - IGBT, 1500 V, 30 A
- Stock
- 31,177
- In Stock :
- 31,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 372 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Terminal Finish :
- Tin (Sn)
- HTS Code :
- 8541.29.00.95
- JEDEC-95 Code :
- TO-247AB
- Power - Max :
- 500W
- Number of Terminations :
- 3
- Gate Charge :
- 369nC
- Current - Collector Pulsed (Icm) :
- 90A
- Collector Emitter Breakdown Voltage :
- 1.5kV
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn Off Time-Nom (toff) :
- 1080 ns
- Mount :
- Through Hole
- Published :
- 2016
- Reach Compliance Code :
- not_compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 30A
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Td (on/off) @ 25°C :
- 32ns/492ns
- Voltage - Collector Emitter Breakdown (Max) :
- 1500V
- Number of Elements :
- 1
- Weight :
- 6.39g
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 500W
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Polarity/Channel Type :
- N-Channel
- Max Collector Current :
- 60A
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- POWER CONTROL
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Switching Energy :
- 1.16mJ (on), 900μJ (off)
- Datasheets
- FGH30S150P

FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30S150P Description
FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
FGH30S150P Features
-
High Speed Switching
-
Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
-
High Input Impedance
-
Pb?Free and RoHS Compliant
-
Max Power Dissipation: 500 W
-
Max Collector Current: 60 A
-
Turn On Time: 372 ns
-
ROHS3 Compliant
FGH30S150P Applications
-
Power Control
-
Induction Heating
-
Microwave Oven
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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