FGH30S150P
- Mfr.Part #
- FGH30S150P
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- FGH30S150P - IGBT, 1500 V, 30 A
- Stock
- 31,177
- In Stock :
- 31,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Published :
- 2016
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 30A
- Mounting Type :
- Through Hole
- Turn On Time :
- 372 ns
- Transistor Application :
- POWER CONTROL
- Switching Energy :
- 1.16mJ (on), 900μJ (off)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 369nC
- Voltage - Collector Emitter Breakdown (Max) :
- 1500V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 90A
- Td (on/off) @ 25°C :
- 32ns/492ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Weight :
- 6.39g
- HTS Code :
- 8541.29.00.95
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- -55°C~175°C TJ
- Turn Off Time-Nom (toff) :
- 1080 ns
- Power - Max :
- 500W
- Collector Emitter Breakdown Voltage :
- 1.5kV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 60A
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500W
- JEDEC-95 Code :
- TO-247AB
- Datasheets
- FGH30S150P

FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30S150P Description
FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
FGH30S150P Features
-
High Speed Switching
-
Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
-
High Input Impedance
-
Pb?Free and RoHS Compliant
-
Max Power Dissipation: 500 W
-
Max Collector Current: 60 A
-
Turn On Time: 372 ns
-
ROHS3 Compliant
FGH30S150P Applications
-
Power Control
-
Induction Heating
-
Microwave Oven
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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