FGH30N60LSDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Weight :

6.39g

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-247-3

Fall Time-Max (tf) :

2000ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

250 ns

Height :

20.82mm

Polarity/Channel Type :

N-Channel

Input Type :

Standard

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

600V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Application :

POWER CONTROL

Max Power Dissipation :

480W

ECCN Code :

EAR99

Turn On Time :

62 ns

Width :

4.82mm

Mount :

Through Hole

HTS Code :

8541.29.00.95

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Tube

Turn Off Time-Nom (toff) :

2870 ns

Factory Lead Time :

7 Weeks

Published :

2011

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

600V

Reverse Recovery Time :

35 ns

Power - Max :

480W

Element Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Max Collector Current :

60A

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

90A

Gate-Emitter Thr Voltage-Max :

7V

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AB

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

REACH SVHC :

No SVHC

Test Condition :

400V, 30A, 6.8 Ω, 15V

Switching Energy :

1.1mJ (on), 21mJ (off)

Length :

15.87mm

Gate Charge :

225nC

Turn On Delay Time :

18 ns

Td (on/off) @ 25°C :

18ns/250ns

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole