FGH30N60LSDTU
- Mfr.Part #
- FGH30N60LSDTU
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A TO247-3
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- HTS Code :
- 8541.29.00.95
- Factory Lead Time :
- 7 Weeks
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Turn Off Time-Nom (toff) :
- 2870 ns
- Number of Terminations :
- 3
- Fall Time-Max (tf) :
- 2000ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 4.82mm
- Radiation Hardening :
- No
- Length :
- 15.87mm
- Vce(on) (Max) @ Vge, Ic :
- 1.4V @ 15V, 30A
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 18ns/250ns
- JEDEC-95 Code :
- TO-247AB
- Additional Feature :
- LOW CONDUCTION LOSS
- Published :
- 2011
- Reverse Recovery Time :
- 35 ns
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Input Type :
- Standard
- Collector Emitter Saturation Voltage :
- 600V
- ECCN Code :
- EAR99
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 480W
- Collector Emitter Voltage (VCEO) :
- 600V
- Height :
- 20.82mm
- Turn-Off Delay Time :
- 250 ns
- Gate Charge :
- 225nC
- Packaging :
- Tube
- Turn On Time :
- 62 ns
- Turn On Delay Time :
- 18 ns
- Switching Energy :
- 1.1mJ (on), 21mJ (off)
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Application :
- POWER CONTROL
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Gate-Emitter Thr Voltage-Max :
- 7V
- Weight :
- 6.39g
- Number of Elements :
- 1
- Test Condition :
- 400V, 30A, 6.8 Ω, 15V
- Max Collector Current :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 480W
- Current - Collector Pulsed (Icm) :
- 90A
- Datasheets
- FGH30N60LSDTU

FGH30N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30N60LSDTU Description
The FGH30N60LSDTU is an IGBT using ON Semiconductor's planar technology.
FGH30N60LSDTU Features
-
Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
-
High Input Impedance
-
Low Conduction Loss
FGH30N60LSDTU Applications
-
Energy Generation & Distribution
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