FGH30S130P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e3

Published :

2014

Voltage - Collector Emitter Breakdown (Max) :

1300V

Length :

15.87mm

Collector Emitter Saturation Voltage :

1.9V

IGBT Type :

Trench Field Stop

Power - Max :

500W

Gate-Emitter Thr Voltage-Max :

7.5V

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

905 ns

Height :

20.82mm

Collector Emitter Breakdown Voltage :

1.3kV

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

90A

Factory Lead Time :

12 Weeks

Collector Emitter Voltage (VCEO) :

1.3kV

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Fall Time-Max (tf) :

210ns

JEDEC-95 Code :

TO-247AB

ECCN Code :

EAR99

Pbfree Code :

yes

Lead Free :

Lead Free

Input Type :

Standard

Max Power Dissipation :

500W

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

Max Collector Current :

60A

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Gate Charge :

78nC

Turn On Time :

413 ns

Width :

4.82mm

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Gate-Emitter Voltage-Max :

25V

Weight :

6.39g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Through Hole