FGH30S130P
- Mfr.Part #
- FGH30S130P
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1300V 60A 500W TO-247AB
- Stock
- 342
- In Stock :
- 342
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 1.3kV
- JESD-609 Code :
- e3
- Transistor Application :
- POWER CONTROL
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Current - Collector Pulsed (Icm) :
- 90A
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-247AB
- Weight :
- 6.39g
- Collector Emitter Breakdown Voltage :
- 1.3kV
- Max Collector Current :
- 60A
- Mounting Type :
- Through Hole
- Published :
- 2014
- Max Power Dissipation :
- 500W
- Transistor Element Material :
- SILICON
- Power - Max :
- 500W
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 905 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time :
- 413 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Gate-Emitter Thr Voltage-Max :
- 7.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- IGBT Type :
- Trench Field Stop
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 30A
- Gate Charge :
- 78nC
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin (Sn)
- Fall Time-Max (tf) :
- 210ns
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Gate-Emitter Voltage-Max :
- 25V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Length :
- 15.87mm
- HTS Code :
- 8541.29.00.95
- Factory Lead Time :
- 12 Weeks
- Width :
- 4.82mm
- Collector Emitter Saturation Voltage :
- 1.9V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 20.82mm
- Voltage - Collector Emitter Breakdown (Max) :
- 1300V
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Datasheets
- FGH30S130P

FGH30S130P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30S130P Description
ON Semiconductor's FGH30S130P IGBT employs sophisticated field stop trench and shorted-anode technology. Shorted-anode trench IGBTs offer excellent conduction and switching characteristics for soft switching applications.
FGH30S130P Features
-
High Input Impedance
-
This Device is Pb-Free and is RoHS Compliant
-
High-Speed Switching
-
Low Saturation Voltage: VCE(sat) =1.75 V @ IC = 30 A
FGH30S130P Applications
-
Microwave Oven
-
Induction Heating
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