FGH30T65UPDT-F155

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

22ns/139ns

JEDEC-95 Code :

TO-247AB

Reverse Recovery Time :

43 ns

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Collector Emitter Voltage (VCEO) :

650V

Test Condition :

400V, 30A, 8 Ω, 15V

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Element Configuration :

Single

Package / Case :

TO-247-3

Number of Pins :

3

IGBT Type :

Trench Field Stop

Gate-Emitter Thr Voltage-Max :

7.5V

Collector Emitter Breakdown Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Saturation Voltage :

2.1V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

Mount :

Through Hole

Published :

2016

Current - Collector Pulsed (Icm) :

90A

Gate Charge :

155nC

Terminal Finish :

Tin

Switching Energy :

760μJ (on), 400μJ (off)

JESD-609 Code :

e3

Power - Max :

250W

Turn Off Time-Nom (toff) :

170 ns

Max Collector Current :

60A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Turn On Time :

52 ns

Max Power Dissipation :

250W

Input Type :

Standard

Factory Lead Time :

4 Weeks

Weight :

6.39g

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Elements :

1