FGH30S150P

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Mfr.Part #
FGH30S150P
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1500V 60A TO-247
Stock
31,177
In Stock :
31,177

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Gate Charge :
369nC
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Power - Max :
500W
Collector Emitter Breakdown Voltage :
1.5kV
Turn Off Time-Nom (toff) :
1080 ns
Factory Lead Time :
4 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Packaging :
Tube
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Max Collector Current :
60A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
POWER CONTROL
JEDEC-95 Code :
TO-247AB
Test Condition :
600V, 30A, 10 Ω, 15V
HTS Code :
8541.29.00.95
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 30A
Mount :
Through Hole
Td (on/off) @ 25°C :
32ns/492ns
Terminal Position :
Single
Current - Collector Pulsed (Icm) :
90A
Collector Emitter Voltage (VCEO) :
2.4V
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1500V
Terminal Finish :
Tin (Sn)
Reach Compliance Code :
not_compliant
JESD-609 Code :
e3
Weight :
6.39g
Max Power Dissipation :
500W
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
1.16mJ (on), 900μJ (off)
Turn On Time :
372 ns
Case Connection :
COLLECTOR
Number of Elements :
1
Published :
2016
Datasheets
FGH30S150P
Introducing Transistors - IGBTs - Single onsemi FGH30S150P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, FGH30S150P pinout, FGH30S150P datasheet PDF, FGH30S150P amp .Beyond Transistors - IGBTs - Single onsemi FGH30S150P ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH30S150P


FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH30S150P Description


FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.



FGH30S150P Features


  • High Speed Switching

  • Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A

  • High Input Impedance

  • Pb?Free and RoHS Compliant

  • Max Power Dissipation: 500 W

  • Max Collector Current: 60 A

  • Turn On Time: 372 ns

  • ROHS3 Compliant



FGH30S150P Applications


  • Power Control

  • Induction Heating

  • Microwave Oven

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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