FGH30S150P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Terminal Position :

Single

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

2.4V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Terminal Finish :

Tin (Sn)

Switching Energy :

1.16mJ (on), 900μJ (off)

Number of Terminations :

3

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Pbfree Code :

yes

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

90A

Td (on/off) @ 25°C :

32ns/492ns

Weight :

6.39g

JESD-30 Code :

R-PSFM-T3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Power Dissipation :

500W

Case Connection :

COLLECTOR

Published :

2016

Power - Max :

500W

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

1500V

Package / Case :

TO-247-3

Reach Compliance Code :

not_compliant

Turn Off Time-Nom (toff) :

1080 ns

Input Type :

Standard

JEDEC-95 Code :

TO-247AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

600V, 30A, 10 Ω, 15V

Mount :

Through Hole

Factory Lead Time :

4 Weeks

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Collector Current :

60A

Collector Emitter Breakdown Voltage :

1.5kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

372 ns

Gate Charge :

369nC