FGH30S150P
- Mfr.Part #
- FGH30S150P
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1500V 60A TO-247
- Stock
- 31,177
- In Stock :
- 31,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 372 ns
- Current - Collector Pulsed (Icm) :
- 90A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 500W
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- HTS Code :
- 8541.29.00.95
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 60A
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 2.4V
- JEDEC-95 Code :
- TO-247AB
- ECCN Code :
- EAR99
- Power - Max :
- 500W
- Turn Off Time-Nom (toff) :
- 1080 ns
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 1.5kV
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Published :
- 2016
- JESD-30 Code :
- R-PSFM-T3
- Voltage - Collector Emitter Breakdown (Max) :
- 1500V
- Number of Terminations :
- 3
- Transistor Application :
- POWER CONTROL
- Mounting Type :
- Through Hole
- Weight :
- 6.39g
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Td (on/off) @ 25°C :
- 32ns/492ns
- Switching Energy :
- 1.16mJ (on), 900μJ (off)
- Input Type :
- Standard
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Pbfree Code :
- yes
- Gate Charge :
- 369nC
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 30A
- Datasheets
- FGH30S150P

FGH30S150P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH30S150P Description
FGH30S150P, using advanced field stop trench and shorted?anode technology, ON Semiconductor’s shorted?anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
FGH30S150P Features
-
High Speed Switching
-
Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
-
High Input Impedance
-
Pb?Free and RoHS Compliant
-
Max Power Dissipation: 500 W
-
Max Collector Current: 60 A
-
Turn On Time: 372 ns
-
ROHS3 Compliant
FGH30S150P Applications
-
Power Control
-
Induction Heating
-
Microwave Oven
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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