FGH30N6S2

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Mfr.Part #
FGH30N6S2
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 45A 167W TO247
Stock
1,554
In Stock :
1,554

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
600V
Rise Time :
10ns
Package / Case :
TO-247-3
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2V
Power - Max :
167W
Min Operating Temperature :
-55°C
Max Power Dissipation :
167W
Published :
2001
Gate Charge :
23nC
Max Operating Temperature :
150°C
Voltage - Rated DC :
600V
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 12A
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Switching Energy :
55μJ (on), 100μJ (off)
Collector Emitter Breakdown Voltage :
600V
Max Collector Current :
45A
Mount :
Through Hole
Current - Collector Pulsed (Icm) :
108A
Input Type :
Standard
Test Condition :
390V, 12A, 10Ohm, 15V
Current - Collector (Ic) (Max) :
45A
Td (on/off) @ 25°C :
6ns/40ns
Power Dissipation :
167W
Supplier Device Package :
TO-247-3
Current Rating :
45A
RoHS Status :
RoHS Compliant
Datasheets
FGH30N6S2
Introducing Transistors - IGBTs - Single onsemi FGH30N6S2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, FGH30N6S2 pinout, FGH30N6S2 datasheet PDF, FGH30N6S2 amp .Beyond Transistors - IGBTs - Single onsemi FGH30N6S2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH30N6S2


FGH30N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH30N6S2 Description


Low Gate Charge, Low Plateau Voltage SMPS II IGBTs (FGH30N6S2) combine the high switching speed of SMPS IGBTs with lower gate charge, plateau voltage, and avalanche capabilities (UIS). These LGC devices cut gate drive power consumption and shorten delay times. FGH30N6S2 is appropriate for high-voltage switched-mode power supply applications that require low conduction loss, quick switching times, and UIS functionality. PFC circuits, full-bridge topologies, half-bridge topologies, push-pull topologies, and other topologies are all supported by SMPS II LGC devices.



FGH30N6S2 Features


  • Low Conduction Loss

  • 100kHz Operation at 390V, 14A

  • 200kHZ Operation at 390V, 9A

  • 600V Switching SOA Capability

  • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ

  • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC

  • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V

  • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical



FGH30N6S2 Applications


  • Push-Pull circuits

  • Full bridge topologies

  • Half-bridge topologies

  • Uninterruptible power supplies

  • Power Factor Correction (PFC) circuits

  • Zero voltage and zero current switching circuits


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