FDB28N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Continuous Drain Current (ID) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

250W Tc

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Turn-Off Delay Time :

79 ns

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

35 ns

Contact Plating :

Tin

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

300V

Resistance :

129mOhm

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Lead Free :

Lead Free

FET Type :

N-Channel

JESD-609 Code :

e3

Rise Time :

135ns

Published :

2007

Weight :

1.31247g

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Length :

10.67mm

Height :

4.83mm

Pbfree Code :

yes

Width :

11.33mm

Packaging :

Tape and Reel (TR)

Series :

UniFET™

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

588 mJ

Fall Time (Typ) :

69 ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

250W

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

129m Ω @ 14A, 10V

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED