FDB28N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Pbfree Code :

yes

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

28A

Mount :

Surface Mount

Weight :

1.31247g

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

129mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Published :

2007

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Length :

10.67mm

Lead Free :

Lead Free

Fall Time (Typ) :

69 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

250W Tc

Drain to Source Breakdown Voltage :

300V

Power Dissipation :

250W

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

588 mJ

FET Type :

N-Channel

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

11.33mm

Packaging :

Tape and Reel (TR)

Rise Time :

135ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

129m Ω @ 14A, 10V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Threshold Voltage :

5V

Turn-Off Delay Time :

79 ns

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

35 ns

Series :

UniFET™

Height :

4.83mm

Factory Lead Time :

4 Weeks