FDB2552

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

29 ns

Peak Reflow Temperature (Cel) :

260

Current Rating :

37A

Terminal Form :

Gull wing

Turn-Off Delay Time :

36 ns

FET Type :

N-Channel

Rise Time :

29ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Power Dissipation :

150W

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

PowerTrench®

Length :

10.67mm

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Voltage :

150V

Factory Lead Time :

8 Weeks

Width :

11.33mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Number of Terminations :

2

Voltage - Rated DC :

150V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Resistance :

36mOhm

Published :

2002

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Free :

Lead Free

Power Dissipation-Max :

150W Tc

Element Configuration :

Single

Threshold Voltage :

4V

Current :

5A

Contact Plating :

Tin

Radiation Hardening :

No

Height :

4.83mm

Current - Continuous Drain (Id) @ 25°C :

5A Ta 37A Tc

Continuous Drain Current (ID) :

37A

Rds On (Max) @ Id, Vgs :

36m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Weight :

4.535924g

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant