FDB2552
- Mfr.Part #
- FDB2552
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 5A/37A TO263AB
- Stock
- 28,570
- In Stock :
- 28,570
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Width :
- 11.33mm
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 150V
- Fall Time (Typ) :
- 29 ns
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 37A
- Rise Time :
- 29ns
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 150V
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 36mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta 37A Tc
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 16A, 10V
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 150W Tc
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Voltage :
- 150V
- Turn-Off Delay Time :
- 36 ns
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Threshold Voltage :
- 4V
- Current Rating :
- 37A
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Radiation Hardening :
- No
- Series :
- PowerTrench®
- Number of Pins :
- 3
- Published :
- 2002
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 10.67mm
- Current :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150W
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Datasheets
- FDB2552
FDB2552 Documents

N-Channel Tape & Reel (TR) 36m Ω @ 16A, 10V ±20V 2800pF @ 25V 51nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2552 Description
FDB2552 is a 150V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB2552, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB2552 is in the TO-263AB-3 package with 150W power dissipation.
FDB2552 Features
-
RDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
-
Qg(tot) = 39nC (Typ.), VGS = 10V
-
Low Miller Charge
-
Low QRR Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDB2552 Applications
-
DC/DC Converters
-
Off-line UPS
-
Distributed Power Architectures and VRMs
-
Primary Switch for 24V and 48V Systems
-
High Voltage Synchronous Rectifier
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