FDB2614
- Mfr.Part #
- FDB2614
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 62A D2PAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Pbfree Code :
- yes
- Nominal Vgs :
- 4 V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 62A
- Dual Supply Voltage :
- 200V
- Series :
- PowerTrench®
- Number of Pins :
- 2
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 7230pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 284ns
- Vgs (Max) :
- ±30V
- Weight :
- 1.31247g
- Turn-Off Delay Time :
- 103 ns
- Power Dissipation :
- 260W
- Factory Lead Time :
- 7 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 99nC @ 10V
- Resistance :
- 27mOhm
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 31A, 10V
- Contact Plating :
- Tin
- Width :
- 11.33mm
- Length :
- 10.67mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2013
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 260W Tc
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Threshold Voltage :
- 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 62A
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 200V
- Turn On Delay Time :
- 77 ns
- Fall Time (Typ) :
- 162 ns
- REACH SVHC :
- No SVHC
- Height :
- 4.83mm
- Voltage - Rated DC :
- 200V
- JESD-609 Code :
- e3
- Datasheets
- FDB2614

N-Channel Tape & Reel (TR) 27m Ω @ 31A, 10V ±30V 7230pF @ 25V 99nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2614 Description
FDB2614 is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 200V. The operating temperature of FDB2614 is -55°C~150°C TJ and its maximum power dissipation is 260W. FDB2614 has 2 pins and it is available in TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB packaging way. This N-Channel MOSFET is produced using a Power Trench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDB2614 Features
-
RDS(on) = 22.9m? (Typ.) @ VGS = 10V, ID = 31A
-
High-performance trench technology for extremely low RDS(on)
-
Low Gate Charge
-
High power and current handling capability
FDB2614 Applications
-
Other Audio & Video
-
Consumer Appliances
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