FDB2572
- Mfr.Part #
- FDB2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO263AB
- Stock
- 1,268
- In Stock :
- 1,268
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Power Dissipation :
- 135W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 135W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Weight :
- 1.31247g
- Series :
- PowerTrench®
- Height :
- 4.83mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 150V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current Rating :
- 29A
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Rise Time :
- 14ns
- Drain Current-Max (Abs) (ID) :
- 4A
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 31 ns
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 54mOhm
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 14 ns
- Width :
- 11.33mm
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 150V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 11 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 29A
- Published :
- 2002
- Datasheets
- FDB2572
FDB2572 Documents

N-Channel Tape & Reel (TR) 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2572 Description
Only ON Semiconductor produces these DMOS N-channel enhancement mode field effect transistors with high cell density. The on-state resistance of these devices has been reduced while maintaining their strong, trustworthy, and rapid switching performance. They may be used in the majority of applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These parts are most suitable for switching applications, small servo motor control, and other low-voltage, low-current usage, such as power MOSFET gate drivers.
FDB2572 Features
?Vqs = 10V, Qg(tot) = 26nC (Typ.
?Minimal Miller Charge
?Low-Quality Bocy Diode
?UI Capabilities (Single Pulse and Repetitive Pulse)
FDB2572 Applications
?Off-Line UPS and DC/DC converters
?VRMs and Distributed Power Architectures
?Primary Switch for Systems Using 24V and 48V Power
?High-voltage synchronized rectifiers
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