FDB2572
- Mfr.Part #
- FDB2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO263AB
- Stock
- 1,268
- In Stock :
- 1,268
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 11 ns
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Voltage - Rated DC :
- 150V
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Weight :
- 1.31247g
- Resistance :
- 54mOhm
- Published :
- 2002
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 29A
- Turn-Off Delay Time :
- 31 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 135W Tc
- Continuous Drain Current (ID) :
- 29A
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Length :
- 10.67mm
- Width :
- 11.33mm
- Height :
- 4.83mm
- Number of Elements :
- 1
- Fall Time (Typ) :
- 14 ns
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 4A
- Power Dissipation :
- 135W
- JESD-30 Code :
- R-PSSO-G2
- Series :
- PowerTrench®
- Rise Time :
- 14ns
- Drain to Source Breakdown Voltage :
- 150V
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- FDB2572

N-Channel Tape & Reel (TR) 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2572 Description
Only ON Semiconductor produces these DMOS N-channel enhancement mode field effect transistors with high cell density. The on-state resistance of these devices has been reduced while maintaining their strong, trustworthy, and rapid switching performance. They may be used in the majority of applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These parts are most suitable for switching applications, small servo motor control, and other low-voltage, low-current usage, such as power MOSFET gate drivers.
FDB2572 Features
?Vqs = 10V, Qg(tot) = 26nC (Typ.
?Minimal Miller Charge
?Low-Quality Bocy Diode
?UI Capabilities (Single Pulse and Repetitive Pulse)
FDB2572 Applications
?Off-Line UPS and DC/DC converters
?VRMs and Distributed Power Architectures
?Primary Switch for Systems Using 24V and 48V Power
?High-voltage synchronized rectifiers
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