FDB2570

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Mfr.Part #
FDB2570
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 150V 22A TO263AB
Stock
7,743
In Stock :
7,743

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Operating Temperature :
-65°C~175°C TJ
Mounting Type :
Surface Mount
Number of Terminations :
2
Pin Count :
4
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
80m Ω @ 11A, 10V
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
93W Tc
Drain Current-Max (Abs) (ID) :
22A
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
150V
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Drain-source On Resistance-Max :
0.08Ohm
Terminal Finish :
MATTE TIN
FET Type :
N-Channel
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1.911pF @ 75V
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Qualification Status :
COMMERCIAL
Vgs(th) (Max) @ Id :
4V @ 250µA
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Current - Continuous Drain (Id) @ 25°C :
22A Ta
Pulsed Drain Current-Max (IDM) :
50A
Avalanche Energy Rating (Eas) :
375 mJ
Series :
PowerTrench®
JESD-30 Code :
R-PSSO-G2
Drain to Source Voltage (Vdss) :
150V
Datasheets
FDB2570
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB2570 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB2570 pinout, FDB2570 datasheet PDF, FDB2570 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDB2570 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDB2570


N-Channel Tape & Reel (TR) 80m Ω @ 11A, 10V ±20V 1.911pF @ 75V 56nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB2570 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 375 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.911pF @ 75V maximal input capacitance.A device can conduct a maximum continuous current of [22A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 50A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

FDB2570 Features


the avalanche energy rating (Eas) is 375 mJ
based on its rated peak drain current 50A.
a 150V drain to source voltage (Vdss)


FDB2570 Applications


There are a lot of Rochester Electronics, LLC
FDB2570 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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