FDB2570
- Mfr.Part #
- FDB2570
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 22A TO263AB
- Stock
- 7,743
- In Stock :
- 7,743
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~175°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Pin Count :
- 4
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 11A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 93W Tc
- Drain Current-Max (Abs) (ID) :
- 22A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 150V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.08Ohm
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.911pF @ 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- Pulsed Drain Current-Max (IDM) :
- 50A
- Avalanche Energy Rating (Eas) :
- 375 mJ
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 150V
- Datasheets
- FDB2570

N-Channel Tape & Reel (TR) 80m Ω @ 11A, 10V ±20V 1.911pF @ 75V 56nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2570 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 375 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.911pF @ 75V maximal input capacitance.A device can conduct a maximum continuous current of [22A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 50A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
FDB2570 Features
the avalanche energy rating (Eas) is 375 mJ
based on its rated peak drain current 50A.
a 150V drain to source voltage (Vdss)
FDB2570 Applications
There are a lot of Rochester Electronics, LLC
FDB2570 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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