FDB2532

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

310W

FET Type :

N-Channel

Element Configuration :

Single

Turn On Delay Time :

16 ns

Number of Terminations :

2

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Width :

11.33mm

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

150V

Mount :

Surface Mount

Resistance :

16mOhm

Number of Pins :

3

Voltage :

150V

Fall Time (Typ) :

17 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

400 mJ

Lead Free :

Lead Free

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Current :

79A

Height :

4.83mm

Rise Time :

30ns

Continuous Drain Current (ID) :

79A

Current Rating :

79A

Mounting Type :

Surface Mount

Number of Elements :

1

Published :

2002

Contact Plating :

Tin

Series :

PowerTrench®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Pbfree Code :

yes

Length :

10.67mm

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Weight :

4.535924g

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

ECCN Code :

EAR99

Turn-Off Delay Time :

39 ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

150V

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Dual Supply Voltage :

150V

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

Power Dissipation-Max :

310W Tc

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V