FDB2532

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

3

Nominal Vgs :

4 V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Case Connection :

DRAIN

Height :

4.83mm

Termination :

SMD/SMT

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

REACH SVHC :

No SVHC

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Voltage - Rated DC :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

16mOhm

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Voltage :

150V

Terminal Form :

Gull wing

Mount :

Surface Mount

Continuous Drain Current (ID) :

79A

Turn On Delay Time :

16 ns

Threshold Voltage :

4V

Turn-Off Delay Time :

39 ns

Current Rating :

79A

Current :

79A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

17 ns

Length :

10.67mm

Dual Supply Voltage :

150V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

400 mJ

Rise Time :

30ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Power Dissipation-Max :

310W Tc

Lead Free :

Lead Free

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

310W

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Published :

2002

Vgs (Max) :

±20V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Series :

PowerTrench®

Number of Terminations :

2

Weight :

4.535924g

Width :

11.33mm