FDB20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.26Ohm

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Length :

10.67mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

250W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

80A

Vgs (Max) :

±30V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

500V

Weight :

1.762g

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Terminal Form :

Gull wing

Rise Time :

120ns

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

20A

Width :

9.65mm

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Height :

4.83mm

Series :

FRFET®, UniFET™

Published :

2013

Power Dissipation :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Fall Time (Typ) :

60 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

45 ns

Turn-Off Delay Time :

100 ns

Factory Lead Time :

5 Weeks

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single