FDB20N50F
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- Mfr.Part #
- FDB20N50F
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A D2PAK
- Stock
- 37,799
- In Stock ：
- 37,799
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 10A, 10V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.26Ohm
- Turn-Off Delay Time :
- 100 ns
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 20A
- Series :
- FRFET®, UniFET™
- Width :
- 9.65mm
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Power Dissipation :
- 250W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Length :
- 10.67mm
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 250W Tc
- Pulsed Drain Current-Max (IDM) :
- 80A
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rise Time :
- 120ns
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Weight :
- 1.762g
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 5 Weeks
- Number of Elements :
- 1
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 45 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 60 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Datasheets
- FDB20N50F
FDB20N50F Documents
N-Channel Tape & Reel (TR) 260m Ω @ 10A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB20N50F Overview
A device's maximum input capacitance is 3390pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FDB20N50F Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 80A.
FDB20N50F Applications
There are a lot of ON Semiconductor
FDB20N50F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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