FDB2532-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, PowerTrench®

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

150V

Drain Current-Max (Abs) (ID) :

8A

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Surface Mount :

yes

Vgs (Max) :

±20V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Power Dissipation-Max :

310W Tc

Qualification Status :

Not Qualified

Factory Lead Time :

2 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.016Ohm

FET Type :

N-Channel

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

150V