FDB2532

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Power Dissipation-Max :

310W Tc

Transistor Element Material :

SILICON

Length :

10.67mm

Termination :

SMD/SMT

Turn-Off Delay Time :

39 ns

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Rise Time :

30ns

Radiation Hardening :

No

Weight :

4.535924g

JESD-609 Code :

e3

Lead Free :

Lead Free

Transistor Application :

SWITCHING

FET Type :

N-Channel

Current :

79A

Resistance :

16mOhm

REACH SVHC :

No SVHC

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

400 mJ

Voltage - Rated DC :

150V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

310W

Height :

4.83mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

79A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Fall Time (Typ) :

17 ns

Published :

2002

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Elements :

1

Factory Lead Time :

8 Weeks

Dual Supply Voltage :

150V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Contact Plating :

Tin

Width :

11.33mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Drain Current (ID) :

79A

Voltage :

150V