FDB2572
- Mfr.Part #
- FDB2572
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO263AB
- Stock
- 1,268
- In Stock :
- 1,268
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 36 mJ
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 29A
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Drain Current-Max (Abs) (ID) :
- 4A
- Terminal Form :
- Gull wing
- Length :
- 10.67mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Power Dissipation :
- 135W
- Turn-Off Delay Time :
- 31 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 135W Tc
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rise Time :
- 14ns
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 11 ns
- Width :
- 11.33mm
- Drain to Source Breakdown Voltage :
- 150V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 14 ns
- Voltage - Rated DC :
- 150V
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Resistance :
- 54mOhm
- Weight :
- 1.31247g
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 29A
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Datasheets
- FDB2572
FDB2572 Documents

N-Channel Tape & Reel (TR) 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2572 Description
Only ON Semiconductor produces these DMOS N-channel enhancement mode field effect transistors with high cell density. The on-state resistance of these devices has been reduced while maintaining their strong, trustworthy, and rapid switching performance. They may be used in the majority of applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These parts are most suitable for switching applications, small servo motor control, and other low-voltage, low-current usage, such as power MOSFET gate drivers.
FDB2572 Features
?Vqs = 10V, Qg(tot) = 26nC (Typ.
?Minimal Miller Charge
?Low-Quality Bocy Diode
?UI Capabilities (Single Pulse and Repetitive Pulse)
FDB2572 Applications
?Off-Line UPS and DC/DC converters
?VRMs and Distributed Power Architectures
?Primary Switch for Systems Using 24V and 48V Power
?High-voltage synchronized rectifiers
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