FDB2572

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

31 ns

Mount :

Surface Mount

Turn On Delay Time :

11 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

54m Ω @ 9A, 10V

Resistance :

54mOhm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

4.83mm

Width :

11.33mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Published :

2002

Length :

10.67mm

Voltage - Rated DC :

150V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Terminal Form :

Gull wing

Fall Time (Typ) :

14 ns

Current Rating :

29A

Number of Elements :

1

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

36 mJ

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

150V

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

135W Tc

Continuous Drain Current (ID) :

29A

Power Dissipation :

135W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Weight :

1.31247g

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Rise Time :

14ns

Pbfree Code :

yes

Series :

PowerTrench®

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4A Ta 29A Tc