FDB24AN06LA0

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

19m Ω @ 40A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

36 mJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

7.8A Ta 40A Tc

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Power Dissipation-Max :

75W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1.85pF @ 25V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7.8A

Drain to Source Voltage (Vdss) :

60V

Series :

PowerTrench®

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Pbfree Code :

yes

Pin Count :

4

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.019Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G2

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE