FDB20AN06A0

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Mfr.Part #
FDB20AN06A0
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 9A/45A TO263AB
Stock
1,654
In Stock :
1,654

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
60V
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 25V
Surface Mount :
yes
Case Connection :
DRAIN
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
9A Ta 45A Tc
Number of Terminations :
2
Transistor Element Material :
SILICON
Terminal Position :
Single
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Terminal Finish :
MATTE TIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
Pin Count :
4
DS Breakdown Voltage-Min :
60V
Drain Current-Max (Abs) (ID) :
45A
Drain-source On Resistance-Max :
0.02Ohm
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
50 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Power Dissipation-Max :
90W Tc
Datasheets
FDB20AN06A0
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB20AN06A0 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, FDB20AN06A0 pinout, FDB20AN06A0 datasheet PDF, FDB20AN06A0 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB20AN06A0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB20AN06A0


N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB20AN06A0 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 950pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [45A] according to its drain current.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDB20AN06A0 Features


the avalanche energy rating (Eas) is 50 mJ
a 60V drain to source voltage (Vdss)


FDB20AN06A0 Applications


There are a lot of Rochester Electronics, LLC
FDB20AN06A0 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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