FDB20AN06A0
- Mfr.Part #
- FDB20AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 9A/45A TO263AB
- Stock
- 1,654
- In Stock :
- 1,654
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 25V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max :
- 90W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Qualification Status :
- COMMERCIAL
- Drain Current-Max (Abs) (ID) :
- 45A
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 60V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 45A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Series :
- PowerTrench®
- Terminal Finish :
- MATTE TIN
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 0.02Ohm
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 45A Tc
- Surface Mount :
- yes
- Pin Count :
- 4
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- FDB20AN06A0

N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB20AN06A0 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 950pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [45A] according to its drain current.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FDB20AN06A0 Features
the avalanche energy rating (Eas) is 50 mJ
a 60V drain to source voltage (Vdss)
FDB20AN06A0 Applications
There are a lot of Rochester Electronics, LLC
FDB20AN06A0 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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