FDB20AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

90W Tc

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Avalanche Energy Rating (Eas) :

50 mJ

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

45A

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Terminations :

2

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

20m Ω @ 45A, 10V

Drain to Source Voltage (Vdss) :

60V

Series :

PowerTrench®

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.02Ohm

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

9A Ta 45A Tc

Surface Mount :

yes

Pin Count :

4

Pbfree Code :

yes

Terminal Position :

Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB