FDB2570

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.08Ohm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

PowerTrench®

Power Dissipation-Max :

93W Tc

Operating Temperature :

-65°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

80m Ω @ 11A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1.911pF @ 75V

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

375 mJ

Current - Continuous Drain (Id) @ 25°C :

22A Ta

DS Breakdown Voltage-Min :

150V

Pulsed Drain Current-Max (IDM) :

50A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

22A

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Number of Terminations :

2

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Surface Mount :

yes