FDB2570

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1.911pF @ 75V

Drain to Source Voltage (Vdss) :

150V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Number of Elements :

1

Terminal Position :

Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

93W Tc

Drain-source On Resistance-Max :

0.08Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

375 mJ

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

150V

Rds On (Max) @ Id, Vgs :

80m Ω @ 11A, 10V

Number of Terminations :

2

Operating Temperature :

-65°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

R-PSSO-G2