FDB2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

40A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

200V

Pin Count :

3

Operating Temperature :

-65°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1.32pF @ 100V

Power Dissipation-Max :

93W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

19A

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.13Ohm

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

DS Breakdown Voltage-Min :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Case Connection :

DRAIN

Number of Elements :

1

Terminal Finish :

NOT SPECIFIED

Vgs (Max) :

±20V

Surface Mount :

yes

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

375 mJ

Pbfree Code :

yes