DMN2041UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Continuous Drain Current (ID) :

4.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.4V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.04Ohm

Power - Max :

1.4W

JESD-30 Code :

S-PDSO-N6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

JESD-609 Code :

e4

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

713pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Published :

2015

FET Type :

2 N-Channel (Dual)

Terminal Form :

NO LEAD

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

2

Max Power Dissipation :

1.4W

Package / Case :

6-UDFN Exposed Pad

Factory Lead Time :

15 Weeks