DMN2013UFX-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2014

Turn-Off Delay Time :

42.5 ns

Fall Time (Typ) :

13.7 ns

FET Type :

2 N-Channel (Dual) Common Drain

Max Power Dissipation :

780mW

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Rise Time :

20.3ns

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

2607pF @ 10V

Number of Channels :

2

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 8.5A, 4.5V

Factory Lead Time :

14 Weeks

Turn On Delay Time :

8.6 ns

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

6-VFDFN Exposed Pad

Series :

Automotive, AEC-Q101

Continuous Drain Current (ID) :

10A

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

57.4nC @ 8V

Power - Max :

2.14W

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Standard

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ