CSD88537NDT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Number of Channels :

2

Element Configuration :

Dual

Base Part Number :

CSD88537

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Height :

1.75mm

Rds On (Max) @ Id, Vgs :

15m Ω @ 8A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

5 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

15A

JESD-609 Code :

e4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

8A

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

FET Feature :

Standard

Max Power Dissipation :

2.1W

Factory Lead Time :

6 Weeks

Thickness :

1.58mm

Fall Time (Typ) :

19 ns

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.019Ohm

Power Dissipation :

2.1W

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 30V

Mounting Type :

Surface Mount

Length :

4.9mm

Turn On Delay Time :

6 ns

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Width :

3.91mm

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Drain Current-Max (Abs) (ID) :

8A

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

REACH SVHC :

No SVHC

Contact Plating :

Gold

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

540.001716mg

Series :

NexFET™

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED