CSD83325LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Terminal Form :

NO LEAD

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Threshold Voltage :

950mV

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

711 ns

RoHS Status :

ROHS3 Compliant

Series :

NexFET™

Element Configuration :

Dual

Width :

2.16mm

Mounting Type :

Surface Mount

Turn On Delay Time :

205 ns

Rise Time :

353ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-XFBGA

FET Type :

2 N-Channel (Dual) Common Drain

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Length :

1.11mm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

10V

Max Power Dissipation :

2.3W

Continuous Drain Current (ID) :

8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Feedback Cap-Max (Crss) :

144 pF

Drain to Source Resistance :

9.9mOhm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD83325

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

12V

Thickness :

200μm

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Number of Pins :

6

Fall Time (Typ) :

589 ns

Number of Elements :

2