CSD83325L

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Thickness :

200μm

Turn On Delay Time :

205 ns

Max Power Dissipation :

2.3W

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Mount :

Surface Mount

Fall Time (Typ) :

589 ns

Gate to Source Voltage (Vgs) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Number of Elements :

2

Number of Pins :

6

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8A

Package / Case :

6-XFBGA

Drain to Source Voltage (Vdss) :

12V

Feedback Cap-Max (Crss) :

144 pF

FET Type :

2 N-Channel (Dual) Common Drain

Number of Terminations :

6

Length :

1.11mm

Width :

2.16mm

Lead Free :

Lead Free

Turn-Off Delay Time :

711 ns

Terminal Position :

BOTTOM

Base Part Number :

CSD83325

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Peak Reflow Temperature (Cel) :

260

Rise Time :

353ns