CSD83325L

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

FET Feature :

Standard

Thickness :

200μm

Series :

NexFET™

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

RoHS Status :

ROHS3 Compliant

Length :

1.11mm

Max Power Dissipation :

2.3W

Terminal Form :

NO LEAD

Feedback Cap-Max (Crss) :

144 pF

Width :

2.16mm

Number of Pins :

6

Turn-Off Delay Time :

711 ns

Fall Time (Typ) :

589 ns

Number of Terminations :

6

Pbfree Code :

yes

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Base Part Number :

CSD83325

Element Configuration :

Dual

Rise Time :

353ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual) Common Drain

Continuous Drain Current (ID) :

8A

Turn On Delay Time :

205 ns

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Package / Case :

6-XFBGA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)