CSD83325L

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.11mm

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

6

Width :

2.16mm

Drain to Source Voltage (Vdss) :

12V

Package / Case :

6-XFBGA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Thickness :

200μm

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual) Common Drain

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Rise Time :

353ns

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

260

Base Part Number :

CSD83325

Turn-Off Delay Time :

711 ns

Continuous Drain Current (ID) :

8A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

BOTTOM

Pbfree Code :

yes

Element Configuration :

Dual

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Turn On Delay Time :

205 ns

Fall Time (Typ) :

589 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

10V

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

144 pF

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2.3W

Series :

NexFET™