CSD86330Q3D
- Mfr.Part #
- CSD86330Q3D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 20A 8LSON
- Stock
- 7,500
- In Stock :
- 7,500
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 15.8 ns
- Threshold Voltage :
- 1.4V
- Factory Lead Time :
- 6 Weeks
- Input Characteristics :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.3mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Series :
- NexFET™
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Number of Functions :
- 1
- Power Dissipation :
- 6W
- Drain to Source Voltage (Vdss) :
- 25V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Turn On Delay Time :
- 5.3 ns
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Width :
- 3.3mm
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Terminal Pitch :
- 0.65mm
- Element Configuration :
- Dual
- Supply Voltage-Max (Vsup) :
- 22V
- FET Type :
- 2 N-Channel (Half Bridge)
- Nominal Vgs :
- 1.4 V
- High Side Driver :
- No
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 4.5V
- Pbfree Code :
- yes
- Thickness :
- 1.5mm
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 12.5V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerLDFN
- Number of Terminations :
- 8
- Number of Pins :
- 8
- Max Power Dissipation :
- 6W
- JESD-609 Code :
- e3
- Base Part Number :
- CSD86330
- Height :
- 1.5mm
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 20A
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 14A, 8V
- Supply Voltage :
- 12V
- Drain to Source Breakdown Voltage :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- FET Feature :
- Logic Level Gate
- Datasheets
- CSD86330Q3D

CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86330Q3D Description
The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86330Q3D Features
Half-Bridge Power Block
90% System Efficiency at 15A Up to 20 A Operation
High Frequency Operation(Up To1.5 MHz)
High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses
Uitra Low Inductance Package RoHS Compliant Halogen Free
Pb-Free Terminal Plating
CSD86330Q3D Applications
Synchronous Buck Converters -High Frequency Applications
- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters
IMVP,VRM,and VRD Applications
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