CSD86330Q3D
- Mfr.Part #
- CSD86330Q3D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 20A 8LSON
- Stock
- 7,500
- In Stock :
- 7,500
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 4.5V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 12.5V
- REACH SVHC :
- No SVHC
- Input Characteristics :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Thickness :
- 1.5mm
- Max Power Dissipation :
- 6W
- Height :
- 1.5mm
- Threshold Voltage :
- 1.4V
- Series :
- NexFET™
- Supply Voltage :
- 12V
- Length :
- 3.3mm
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Mount :
- Surface Mount
- Number of Functions :
- 1
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 14A, 8V
- Drain to Source Voltage (Vdss) :
- 25V
- Package / Case :
- 8-PowerLDFN
- Turn On Delay Time :
- 5.3 ns
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage-Max (Vsup) :
- 22V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Nominal Vgs :
- 1.4 V
- Number of Pins :
- 8
- FET Type :
- 2 N-Channel (Half Bridge)
- High Side Driver :
- No
- Pin Count :
- 8
- Terminal Pitch :
- 0.65mm
- Base Part Number :
- CSD86330
- Factory Lead Time :
- 6 Weeks
- FET Feature :
- Logic Level Gate
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Contains Lead
- Width :
- 3.3mm
- Continuous Drain Current (ID) :
- 20A
- Drain to Source Breakdown Voltage :
- 25V
- Element Configuration :
- Dual
- Power Dissipation :
- 6W
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 15.8 ns
- JESD-609 Code :
- e3
- Datasheets
- CSD86330Q3D

CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86330Q3D Description
The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86330Q3D Features
Half-Bridge Power Block
90% System Efficiency at 15A Up to 20 A Operation
High Frequency Operation(Up To1.5 MHz)
High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses
Uitra Low Inductance Package RoHS Compliant Halogen Free
Pb-Free Terminal Plating
CSD86330Q3D Applications
Synchronous Buck Converters -High Frequency Applications
- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters
IMVP,VRM,and VRD Applications
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