CSD86330Q3D
- Mfr.Part #
- CSD86330Q3D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 20A 8LSON
- Stock
- 7,500
- In Stock :
- 7,500
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Pitch :
- 0.65mm
- FET Type :
- 2 N-Channel (Half Bridge)
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Thickness :
- 1.5mm
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 15.8 ns
- ECCN Code :
- EAR99
- Supply Voltage-Max (Vsup) :
- 22V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 4.5V
- Number of Functions :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 12.5V
- Mount :
- Surface Mount
- Series :
- NexFET™
- Pin Count :
- 8
- Gate to Source Voltage (Vgs) :
- 8V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.5mm
- Continuous Drain Current (ID) :
- 20A
- Package / Case :
- 8-PowerLDFN
- Element Configuration :
- Dual
- Power Dissipation :
- 6W
- Input Characteristics :
- Standard
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 5.3 ns
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 14A, 8V
- Contact Plating :
- Tin
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 6W
- Supply Voltage :
- 12V
- High Side Driver :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 25V
- Base Part Number :
- CSD86330
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Length :
- 3.3mm
- Lead Free :
- Contains Lead
- Threshold Voltage :
- 1.4V
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.3mm
- JESD-609 Code :
- e3
- FET Feature :
- Logic Level Gate
- Nominal Vgs :
- 1.4 V
- Radiation Hardening :
- No
- Datasheets
- CSD86330Q3D

CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86330Q3D Description
The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86330Q3D Features
Half-Bridge Power Block
90% System Efficiency at 15A Up to 20 A Operation
High Frequency Operation(Up To1.5 MHz)
High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses
Uitra Low Inductance Package RoHS Compliant Halogen Free
Pb-Free Terminal Plating
CSD86330Q3D Applications
Synchronous Buck Converters -High Frequency Applications
- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters
IMVP,VRM,and VRD Applications
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