CSD86330Q3D

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Input Characteristics :

Standard

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Continuous Drain Current (ID) :

20A

Contact Plating :

Tin

Turn On Delay Time :

5.3 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15.8 ns

Radiation Hardening :

No

Number of Terminations :

8

Threshold Voltage :

1.4V

Series :

NexFET™

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

6W

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 12.5V

Width :

3.3mm

Mount :

Surface Mount

Supply Voltage :

12V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Half Bridge)

Length :

3.3mm

Terminal Pitch :

0.65mm

Element Configuration :

Dual

ECCN Code :

EAR99

Nominal Vgs :

1.4 V

Thickness :

1.5mm

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 14A, 8V

Drain to Source Breakdown Voltage :

25V

Number of Functions :

1

FET Feature :

Logic Level Gate

Height :

1.5mm

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Number of Pins :

8

High Side Driver :

No

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Power Dissipation :

6W

Factory Lead Time :

6 Weeks

Base Part Number :

CSD86330

Peak Reflow Temperature (Cel) :

260

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Pin Count :

8

Supply Voltage-Max (Vsup) :

22V

Pbfree Code :

yes

Package / Case :

8-PowerLDFN