CSD86330Q3D
- Mfr.Part #
- CSD86330Q3D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 20A 8LSON
- Stock
- 7,500
- In Stock :
- 7,500
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Functions :
- 1
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 4.5V
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Max Power Dissipation :
- 6W
- Continuous Drain Current (ID) :
- 20A
- Thickness :
- 1.5mm
- Series :
- NexFET™
- Number of Terminations :
- 8
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 1.4 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 12.5V
- Element Configuration :
- Dual
- Threshold Voltage :
- 1.4V
- Length :
- 3.3mm
- FET Type :
- 2 N-Channel (Half Bridge)
- Power Dissipation :
- 6W
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 15.8 ns
- Factory Lead Time :
- 6 Weeks
- Drain to Source Voltage (Vdss) :
- 25V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Input Characteristics :
- Standard
- Drain to Source Breakdown Voltage :
- 25V
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 8V
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 14A, 8V
- Lead Free :
- Contains Lead
- Base Part Number :
- CSD86330
- Pin Count :
- 8
- Package / Case :
- 8-PowerLDFN
- Supply Voltage-Max (Vsup) :
- 22V
- Contact Plating :
- Tin
- Height :
- 1.5mm
- Turn On Delay Time :
- 5.3 ns
- High Side Driver :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.3mm
- Supply Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Pitch :
- 0.65mm
- Datasheets
- CSD86330Q3D

CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86330Q3D Description
The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86330Q3D Features
Half-Bridge Power Block
90% System Efficiency at 15A Up to 20 A Operation
High Frequency Operation(Up To1.5 MHz)
High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses
Uitra Low Inductance Package RoHS Compliant Halogen Free
Pb-Free Terminal Plating
CSD86330Q3D Applications
Synchronous Buck Converters -High Frequency Applications
- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters
IMVP,VRM,and VRD Applications
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