CSD86330Q3D

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Pitch :

0.65mm

FET Type :

2 N-Channel (Half Bridge)

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Thickness :

1.5mm

REACH SVHC :

No SVHC

Factory Lead Time :

6 Weeks

Number of Terminations :

8

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15.8 ns

ECCN Code :

EAR99

Supply Voltage-Max (Vsup) :

22V

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Number of Functions :

1

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 12.5V

Mount :

Surface Mount

Series :

NexFET™

Pin Count :

8

Gate to Source Voltage (Vgs) :

8V

Peak Reflow Temperature (Cel) :

260

Height :

1.5mm

Continuous Drain Current (ID) :

20A

Package / Case :

8-PowerLDFN

Element Configuration :

Dual

Power Dissipation :

6W

Input Characteristics :

Standard

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5.3 ns

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 14A, 8V

Contact Plating :

Tin

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Max Power Dissipation :

6W

Supply Voltage :

12V

High Side Driver :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Base Part Number :

CSD86330

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Length :

3.3mm

Lead Free :

Contains Lead

Threshold Voltage :

1.4V

Packaging :

Tape and Reel (TR)

Width :

3.3mm

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Nominal Vgs :

1.4 V

Radiation Hardening :

No