CSD83325LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Turn On Delay Time :

205 ns

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

144 pF

Lead Free :

Lead Free

Thickness :

200μm

Transistor Application :

SWITCHING

Package / Case :

6-XFBGA

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Rise Time :

353ns

Width :

2.16mm

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

12V

Mounting Type :

Surface Mount

Element Configuration :

Dual

Number of Terminations :

6

Continuous Drain Current (ID) :

8A

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

9.9mOhm

Turn-Off Delay Time :

711 ns

Number of Pins :

6

Max Power Dissipation :

2.3W

FET Feature :

Standard

Factory Lead Time :

6 Weeks

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Length :

1.11mm

Fall Time (Typ) :

589 ns

Base Part Number :

CSD83325

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual) Common Drain

Threshold Voltage :

950mV