CSD83325LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

10V

Continuous Drain Current (ID) :

8A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain to Source Voltage (Vdss) :

12V

Turn-Off Delay Time :

711 ns

Width :

2.16mm

Number of Terminations :

6

Base Part Number :

CSD83325

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

10.9nC @ 4.5V

Number of Pins :

6

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Series :

NexFET™

Thickness :

200μm

Package / Case :

6-XFBGA

Length :

1.11mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

589 ns

Mount :

Surface Mount

Pbfree Code :

yes

Rise Time :

353ns

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual) Common Drain

REACH SVHC :

No SVHC

Max Power Dissipation :

2.3W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

9.9mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Feedback Cap-Max (Crss) :

144 pF

Threshold Voltage :

950mV

Turn On Delay Time :

205 ns

Element Configuration :

Dual

Factory Lead Time :

6 Weeks

Number of Elements :

2

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Feature :

Standard