CSD85301Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate, 5V Drive

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Terminations :

6

Width :

2mm

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Package / Case :

6-WDFN Exposed Pad

Element Configuration :

Dual

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

3.8 mJ

Continuous Drain Current (ID) :

5A

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

14 ns

Series :

NexFET™

Height :

800μm

Weight :

9.695537mg

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

5A

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

6 ns

Pbfree Code :

yes

Number of Elements :

2

Contact Plating :

Tin

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

6 Weeks

Length :

2mm

Gate to Source Voltage (Vgs) :

10V

Max Power Dissipation :

2.3W

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.039Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Thickness :

750μm

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Rise Time :

26ns

Number of Pins :

6

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD85301