CSD85301Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

2mm

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Series :

NexFET™

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Element Configuration :

Dual

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Terminal Form :

NO LEAD

Number of Channels :

2

Gate to Source Voltage (Vgs) :

10V

Package / Case :

6-WDFN Exposed Pad

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

6

Number of Pins :

6

Pbfree Code :

yes

Length :

2mm

Turn On Delay Time :

6 ns

Weight :

9.695537mg

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

3.8 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Case Connection :

DRAIN

Height :

800μm

Drain-source On Resistance-Max :

0.039Ohm

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

5A

Fall Time (Typ) :

15 ns

FET Feature :

Logic Level Gate, 5V Drive

ECCN Code :

EAR99

Base Part Number :

CSD85301

Max Power Dissipation :

2.3W

Thickness :

750μm

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Rise Time :

26ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free