CSD86330Q3D

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Power Dissipation :

6W

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 4.5V

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Pbfree Code :

yes

Pin Count :

8

Thickness :

1.5mm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Power Dissipation :

6W

Width :

3.3mm

FET Type :

2 N-Channel (Half Bridge)

Drain to Source Breakdown Voltage :

25V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Nominal Vgs :

1.4 V

Base Part Number :

CSD86330

Mount :

Surface Mount

Contact Plating :

Tin

Turn-Off Delay Time :

15.8 ns

Number of Functions :

1

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 12.5V

High Side Driver :

No

Supply Voltage-Max (Vsup) :

22V

Number of Terminations :

8

Turn On Delay Time :

5.3 ns

Supply Voltage :

12V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 14A, 8V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Length :

3.3mm

Drain to Source Voltage (Vdss) :

25V

Terminal Pitch :

0.65mm

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Height :

1.5mm

Factory Lead Time :

6 Weeks

Package / Case :

8-PowerLDFN

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Characteristics :

Standard

Threshold Voltage :

1.4V