CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Fall Time (Typ) :

2.9 ns

Continuous Drain Current (ID) :

4.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.051Ohm

Drain to Source Voltage (Vdss) :

25V

Mounting Type :

Surface Mount

Nominal Vgs :

1 V

Drain to Source Breakdown Voltage :

25V

Element Configuration :

Dual

Pbfree Code :

yes

Number of Terminations :

12

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Length :

0m

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Rise Time :

4.3ns

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Lead Free :

Contains Lead

Height :

625μm

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

1.5W

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Number of Pins :

12

Factory Lead Time :

6 Weeks

Terminal Form :

Ball

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

CSD86311

Threshold Voltage :

1V

Turn-Off Delay Time :

13.2 ns

Series :

NexFET™

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

Pin Count :

12

Turn On Delay Time :

5.4 ns

Number of Elements :

2

Feedback Cap-Max (Crss) :

13 pF

Gate to Source Voltage (Vgs) :

10V

Mount :

Surface Mount

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tape and Reel (TR)

Width :

0m

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

12-UFBGA, DSBGA

FET Type :

2 N-Channel (Dual)

Power Dissipation :

1.5W

FET Feature :

Logic Level Gate

Thickness :

375μm