CSD86311W1723

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Mfr.Part #
CSD86311W1723
Manufacturer
Texas Instruments
Package / Case
12-UFBGA, DSBGA
Datasheet
Download
Description
MOSFET 2N-CH 25V 4.5A 12DSBGA
Stock
8,168
In Stock :
8,168

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Arrays
Transistor Application :
SWITCHING
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 12.5V
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
25V
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Number of Elements :
2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Part Number :
CSD86311
JESD-609 Code :
e1
Mount :
Surface Mount
Factory Lead Time :
6 Weeks
Number of Terminations :
12
Package / Case :
12-UFBGA, DSBGA
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
1.4V @ 250μA
Width :
0m
Feedback Cap-Max (Crss) :
13 pF
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Ball
Number of Pins :
12
Rds On (Max) @ Id, Vgs :
39m Ω @ 2A, 8V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
NexFET™
Gate to Source Voltage (Vgs) :
10V
Rise Time :
4.3ns
Lead Free :
Contains Lead
Transistor Element Material :
SILICON
Thickness :
375μm
Drain-source On Resistance-Max :
0.051Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
12
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Turn On Delay Time :
5.4 ns
Drain to Source Voltage (Vdss) :
25V
Max Power Dissipation :
1.5W
Turn-Off Delay Time :
13.2 ns
FET Feature :
Logic Level Gate
HTS Code :
8541.29.00.95
Power Dissipation :
1.5W
Terminal Position :
BOTTOM
FET Type :
2 N-Channel (Dual)
Element Configuration :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Nominal Vgs :
1 V
Height :
625μm
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
4.5A
Length :
0m
Threshold Voltage :
1V
Fall Time (Typ) :
2.9 ns
Datasheets
CSD86311W1723
Introducing Transistors - FETs, MOSFETs - Arrays Texas Instruments CSD86311W1723 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:CSD86311, Number of Terminations:12, Package / Case:12-UFBGA, DSBGA, Number of Pins:12, Operating Temperature:-55°C~150°C TJ, CSD86311W1723 pinout, CSD86311W1723 datasheet PDF, CSD86311W1723 amp .Beyond Transistors - FETs, MOSFETs - Arrays Texas Instruments CSD86311W1723 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments CSD86311W1723


CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at

CSD86311W1723 Description


The device's design aims to produce the lowest gate charge and on-resistance while maintaining the best thermal performance in an extremely low profile. The device is best for battery-operated space-constrained applications in load management and DC-DC converters because to its low on-state and gate charge as well as its tiny footprint and low profile.



CSD86311W1723 Features


?N-Ch dual MOSFETs


?Regular Source Configuration


?Miniature Footprint 1.7 x 2.3 mm


?Lowest Possible Qg and Qgd


?Bp Free


? RoHS conformant


?Free of Halogen



CSD86311W1723 Applications


?Management of batteries


?Battery Security


?Convertor DC-DC


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