CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

10V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Mount :

Surface Mount

Number of Pins :

12

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

0.051Ohm

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

Threshold Voltage :

1V

Width :

0m

Fall Time (Typ) :

2.9 ns

Base Part Number :

CSD86311

Nominal Vgs :

1 V

Height :

625μm

Rise Time :

4.3ns

Max Power Dissipation :

1.5W

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Length :

0m

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

12-UFBGA, DSBGA

REACH SVHC :

No SVHC

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

Qualification Status :

Not Qualified

Number of Terminations :

12

Turn On Delay Time :

5.4 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Ball

Terminal Position :

BOTTOM

Power Dissipation :

1.5W

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

4.5A

Factory Lead Time :

6 Weeks

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Turn-Off Delay Time :

13.2 ns

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

13 pF

Pin Count :

12

Thickness :

375μm

Series :

NexFET™

Drain to Source Breakdown Voltage :

25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Voltage (Vdss) :

25V

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V