CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

4.3ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn-Off Delay Time :

13.2 ns

Number of Terminations :

12

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Series :

NexFET™

Lead Free :

Contains Lead

Nominal Vgs :

1 V

Height :

625μm

Transistor Application :

SWITCHING

Number of Elements :

2

HTS Code :

8541.29.00.95

Drain to Source Breakdown Voltage :

25V

Fall Time (Typ) :

2.9 ns

FET Feature :

Logic Level Gate

Number of Pins :

12

Turn On Delay Time :

5.4 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

Operating Mode :

ENHANCEMENT MODE

Length :

0m

Gate to Source Voltage (Vgs) :

10V

JESD-609 Code :

e1

Power Dissipation :

1.5W

Pin Count :

12

Width :

0m

Feedback Cap-Max (Crss) :

13 pF

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

12-UFBGA, DSBGA

Pbfree Code :

yes

Qualification Status :

Not Qualified

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Factory Lead Time :

6 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Base Part Number :

CSD86311

Threshold Voltage :

1V

Continuous Drain Current (ID) :

4.5A

Terminal Position :

BOTTOM

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Dual

Terminal Form :

Ball

Thickness :

375μm

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

Drain to Source Voltage (Vdss) :

25V

Max Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.051Ohm