CSD86311W1723
- Mfr.Part #
- CSD86311W1723
- Manufacturer
- Texas Instruments
- Package / Case
- 12-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 4.5A 12DSBGA
- Stock
- 8,168
- In Stock :
- 8,168
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Feedback Cap-Max (Crss) :
- 13 pF
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.5W
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 10V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.051Ohm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Terminal Form :
- Ball
- JESD-609 Code :
- e1
- FET Type :
- 2 N-Channel (Dual)
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 1 V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 6 Weeks
- HTS Code :
- 8541.29.00.95
- Width :
- 0m
- ECCN Code :
- EAR99
- Number of Elements :
- 2
- Length :
- 0m
- Fall Time (Typ) :
- 2.9 ns
- Drain to Source Voltage (Vdss) :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 13.2 ns
- Number of Pins :
- 12
- Turn On Delay Time :
- 5.4 ns
- Height :
- 625μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- NexFET™
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 2A, 8V
- Continuous Drain Current (ID) :
- 4.5A
- Mount :
- Surface Mount
- Number of Terminations :
- 12
- Thickness :
- 375μm
- Input Capacitance (Ciss) (Max) @ Vds :
- 585pF @ 12.5V
- Terminal Position :
- BOTTOM
- Lead Free :
- Contains Lead
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Rise Time :
- 4.3ns
- Base Part Number :
- CSD86311
- REACH SVHC :
- No SVHC
- Pin Count :
- 12
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 1.5W
- Element Configuration :
- Dual
- Drain to Source Breakdown Voltage :
- 25V
- Pbfree Code :
- yes
- Threshold Voltage :
- 1V
- Package / Case :
- 12-UFBGA, DSBGA
- FET Feature :
- Logic Level Gate
- Datasheets
- CSD86311W1723

CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86311W1723 Description
The device's design aims to produce the lowest gate charge and on-resistance while maintaining the best thermal performance in an extremely low profile. The device is best for battery-operated space-constrained applications in load management and DC-DC converters because to its low on-state and gate charge as well as its tiny footprint and low profile.
CSD86311W1723 Features
?N-Ch dual MOSFETs
?Regular Source Configuration
?Miniature Footprint 1.7 x 2.3 mm
?Lowest Possible Qg and Qgd
?Bp Free
? RoHS conformant
?Free of Halogen
CSD86311W1723 Applications
?Management of batteries
?Battery Security
?Convertor DC-DC
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