CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

CSD86311

JESD-609 Code :

e1

Mount :

Surface Mount

Factory Lead Time :

6 Weeks

Number of Terminations :

12

Package / Case :

12-UFBGA, DSBGA

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Width :

0m

Feedback Cap-Max (Crss) :

13 pF

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Ball

Number of Pins :

12

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

NexFET™

Gate to Source Voltage (Vgs) :

10V

Rise Time :

4.3ns

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Thickness :

375μm

Drain-source On Resistance-Max :

0.051Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

12

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Delay Time :

5.4 ns

Drain to Source Voltage (Vdss) :

25V

Max Power Dissipation :

1.5W

Turn-Off Delay Time :

13.2 ns

FET Feature :

Logic Level Gate

HTS Code :

8541.29.00.95

Power Dissipation :

1.5W

Terminal Position :

BOTTOM

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Nominal Vgs :

1 V

Height :

625μm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

4.5A

Length :

0m

Threshold Voltage :

1V

Fall Time (Typ) :

2.9 ns