CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

Thickness :

375μm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Height :

625μm

Feedback Cap-Max (Crss) :

13 pF

Package / Case :

12-UFBGA, DSBGA

FET Type :

2 N-Channel (Dual)

Width :

0m

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

1 V

Length :

0m

Factory Lead Time :

6 Weeks

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

2.9 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Terminal Form :

Ball

Rise Time :

4.3ns

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Transistor Element Material :

SILICON

Turn On Delay Time :

5.4 ns

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

1.5W

Threshold Voltage :

1V

Pin Count :

12

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain-source On Resistance-Max :

0.051Ohm

Number of Terminations :

12

Turn-Off Delay Time :

13.2 ns

Number of Elements :

2

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

4.5A

Max Power Dissipation :

1.5W

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

12

ECCN Code :

EAR99

JESD-609 Code :

e1

Series :

NexFET™

Base Part Number :

CSD86311