CSD86311W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

39m Ω @ 2A, 8V

ECCN Code :

EAR99

Rise Time :

4.3ns

Base Part Number :

CSD86311

Number of Terminations :

12

HTS Code :

8541.29.00.95

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Element Configuration :

Dual

Number of Pins :

12

Turn-Off Delay Time :

13.2 ns

Thickness :

375μm

Length :

0m

Terminal Form :

Ball

Gate to Source Voltage (Vgs) :

10V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Turn On Delay Time :

5.4 ns

Number of Elements :

2

Series :

NexFET™

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.051Ohm

REACH SVHC :

No SVHC

Package / Case :

12-UFBGA, DSBGA

Nominal Vgs :

1 V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4.5A

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Power Dissipation :

1.5W

Peak Reflow Temperature (Cel) :

260

Width :

0m

Pin Count :

12

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Drain to Source Voltage (Vdss) :

25V

Lead Free :

Contains Lead

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Feedback Cap-Max (Crss) :

13 pF

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 12.5V

Threshold Voltage :

1V

Mounting Type :

Surface Mount

Fall Time (Typ) :

2.9 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

25V

Max Power Dissipation :

1.5W

Height :

625μm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED