CSD86350Q5D
- Mfr.Part #
- CSD86350Q5D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 40A 8SON
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Element Configuration :
- Dual
- Contact Plating :
- Gold, Tin
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Switcher Configuration :
- Buck
- Drain to Source Breakdown Voltage :
- 25V
- Mounting Type :
- Surface Mount
- Input Voltage (Max) :
- 22V
- Number of Terminations :
- 9
- Width :
- 6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 12.5V
- Terminal Finish :
- Matte Tin (Sn)
- Turn On Delay Time :
- 9 ns
- Mount :
- Surface Mount
- Nominal Vgs :
- 1.3 V
- Power Dissipation :
- 13W
- Number of Pins :
- 8
- Supply Current-Max (Isup) :
- 40mA
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- 2 N-Channel (Half Bridge)
- Number of Functions :
- 1
- Fall Time (Typ) :
- 21 ns
- Output Voltage :
- 1.3V
- Base Part Number :
- CSD86350
- Control Technique :
- PULSE WIDTH MODULATION
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Input Voltage-Nom :
- 12V
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerLDFN
- Pbfree Code :
- yes
- Rise Time :
- 23ns
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Turn-Off Delay Time :
- 24 ns
- Terminal Pitch :
- 1.27mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 13W
- Series :
- NexFET™
- Threshold Voltage :
- 1.4V
- Length :
- 5mm
- Gate to Source Voltage (Vgs) :
- 8V
- Thickness :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Analog IC - Other Type :
- SWITCHING REGULATOR
- Drain to Source Voltage (Vdss) :
- 25V
- Pin Count :
- 9
- FET Feature :
- Logic Level Gate
- Switching Frequency-Max :
- 1500kHz
- Continuous Drain Current (ID) :
- 40A
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 20A, 8V
- REACH SVHC :
- No SVHC
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 10.7nC @ 4.5V
- Datasheets
- CSD86350Q5D

CSD86350Q5D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86350Q5D Description
The CSD86350Q5D NexFET powered power module is optimized for synchronous buck applications, providing high current, high efficiency and high frequency capability in a small form factor of 5 mm ?á 6 mm. Optimized for 5V gate driver applications, the product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86350Q5D Features
1? Half-Bridge Power Block
? 90% System Efficiency at 25 A
? Up to 40-A Operation
? High-Frequency Operation (up to 1.5 MHz)
? High-Density SON 5-mm ?á 6-mm Footprint
? Optimized for 5-V Gate Drive
? Low-Switching Losses
? Ultra-Low Inductance Package
? RoHS Compliant
? Halogen Free
? Lead-Free Terminal Plating
CSD86350Q5D Applications
? Synchronous Buck Converters
¨C High-Frequency Applications
¨C High-Current, Low-Duty Cycle Applications
? Multiphase Synchronous Buck Converters
? POL DC-DC Converters
? IMVP, VRM, and VRD Applications
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