CSD85312Q3E

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Gate to Source Voltage (Vgs) :

10V

FET Type :

2 N-Channel (Dual) Common Source

Package / Case :

8-PowerVDFN

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

24 ns

Contact Plating :

Gold

Pbfree Code :

yes

ECCN Code :

EAR99

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Series :

NexFET™

Feedback Cap-Max (Crss) :

40 pF

Factory Lead Time :

8 Weeks

Fall Time (Typ) :

6 ns

Max Power Dissipation :

2.5W

Number of Terminations :

4

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

39A

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Drain to Source Voltage (Vdss) :

20V

Base Part Number :

CSD85312

Operating Mode :

ENHANCEMENT MODE

Width :

3.3mm

Configuration :

COMPLEX

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Thickness :

900μm

FET Feature :

Logic Level Gate, 5V Drive

Pulsed Drain Current-Max (IDM) :

76A

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 4.5V

JESD-609 Code :

e4

Turn On Delay Time :

11 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 10V

Length :

3.3mm

Power Dissipation :

2.5W

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 10A, 8V

Rise Time :

27ns