CSD85312Q3E

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Turn On Delay Time :

11 ns

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 10V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

10V

Power Dissipation :

2.5W

Fall Time (Typ) :

6 ns

RoHS Status :

ROHS3 Compliant

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN

Configuration :

COMPLEX

Base Part Number :

CSD85312

ECCN Code :

EAR99

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Thickness :

900μm

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

39A

Feedback Cap-Max (Crss) :

40 pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

76A

Number of Pins :

8

Number of Elements :

2

Turn-Off Delay Time :

24 ns

Number of Terminations :

4

FET Type :

2 N-Channel (Dual) Common Source

JESD-609 Code :

e4

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Length :

3.3mm

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Contact Plating :

Gold

Width :

3.3mm

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 10A, 8V

FET Feature :

Logic Level Gate, 5V Drive

Drain to Source Voltage (Vdss) :

20V

Rise Time :

27ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR