CSD85312Q3E
- Mfr.Part #
- CSD85312Q3E
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 39A 8VSON
- Stock
- 2,059
- In Stock :
- 2,059
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Turn On Delay Time :
- 11 ns
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 10V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 15.2nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 10V
- Power Dissipation :
- 2.5W
- Fall Time (Typ) :
- 6 ns
- RoHS Status :
- ROHS3 Compliant
- Series :
- NexFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerVDFN
- Configuration :
- COMPLEX
- Base Part Number :
- CSD85312
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 2.5W
- Operating Mode :
- ENHANCEMENT MODE
- Thickness :
- 900μm
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 39A
- Feedback Cap-Max (Crss) :
- 40 pF
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Pulsed Drain Current-Max (IDM) :
- 76A
- Number of Pins :
- 8
- Number of Elements :
- 2
- Turn-Off Delay Time :
- 24 ns
- Number of Terminations :
- 4
- FET Type :
- 2 N-Channel (Dual) Common Source
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Length :
- 3.3mm
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Contact Plating :
- Gold
- Width :
- 3.3mm
- Rds On (Max) @ Id, Vgs :
- 12.4m Ω @ 10A, 8V
- FET Feature :
- Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 27ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- CSD85312Q3E

CSD85312Q3E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD85312Q3E Description
A dual N-channel, 20 V common-source device for adapter or USB input protection is the CSD85312Q3E. For multi-cell battery charging applications where space is at a premium, this SON 3.3 x 3.3 mm device's low drain to drain on-resistanee lowers losses and delivers reduced component count.
CSD85312Q3E Features
?Connectivity via a Common Source
?Low Drain to Drain-On Resistance
?SON 3.3 x 3.3 mm Space-Saving Plastic Package
?Performs best with a 5 V Gate Drive
?High Thermal Conductivity
?Rated for Avalanches
?Terminal plating without pb
? RoHS conformant
?Free of Halogen
CSD85312Q3E Applications
USB input protection for tablets and notebook computers
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