CSD85302LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Thickness :

200μm

Package / Case :

4-XFLGA

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

99 ns

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

FET Type :

2 N-Channel (Dual) Common Drain

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

54ns

Drain to Source Voltage (Vdss) :

20V

Threshold Voltage :

900mV

Terminal Position :

BOTTOM

Feedback Cap-Max (Crss) :

79 pF

Series :

NexFET™

Drain to Source Resistance :

24mOhm

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Base Part Number :

CSD85302

Number of Pins :

4

Mounting Type :

Surface Mount

Turn-Off Delay Time :

173 ns

Continuous Drain Current (ID) :

7A

Turn On Delay Time :

37 ns

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Width :

1.35mm

Number of Terminations :

4

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

10V

Max Power Dissipation :

1.7W

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

Case Connection :

SOURCE

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Elements :

2

Transistor Element Material :

SILICON

Length :

1.35mm