CSD85302LT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Resistance :

24mOhm

Number of Terminations :

4

Threshold Voltage :

900mV

Width :

1.35mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Thickness :

200μm

Length :

1.35mm

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Elements :

2

Feedback Cap-Max (Crss) :

79 pF

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

4

Series :

NexFET™

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 4.5V

Continuous Drain Current (ID) :

7A

FET Feature :

Standard

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual) Common Drain

Transistor Application :

SWITCHING

Turn-Off Delay Time :

173 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

10V

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Rise Time :

54ns

Pbfree Code :

yes

Base Part Number :

CSD85302

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

4-XFLGA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Factory Lead Time :

6 Weeks

Turn On Delay Time :

37 ns

Terminal Position :

BOTTOM

Fall Time (Typ) :

99 ns

Max Power Dissipation :

1.7W

RoHS Status :

ROHS3 Compliant

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE