CSD85301Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Width :

2mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

FET Feature :

Logic Level Gate, 5V Drive

Element Configuration :

Dual

Additional Feature :

AVALANCHE RATED

Base Part Number :

CSD85301

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Series :

NexFET™

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

3.8 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

5A

Turn On Delay Time :

6 ns

Mount :

Surface Mount

Thickness :

750μm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Threshold Voltage :

900mV

Turn-Off Delay Time :

14 ns

Transistor Element Material :

SILICON

Package / Case :

6-WDFN Exposed Pad

Case Connection :

DRAIN

Rise Time :

26ns

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.039Ohm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Factory Lead Time :

12 Weeks

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Continuous Drain Current (ID) :

5A

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Max Power Dissipation :

2.3W

Number of Channels :

2

Weight :

9.695537mg

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Number of Pins :

6

Gate to Source Voltage (Vgs) :

10V