CSD85301Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Rise Time :

26ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

2.3W

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

900mV

Element Configuration :

Dual

Avalanche Energy Rating (Eas) :

3.8 mJ

Turn-Off Delay Time :

14 ns

Package / Case :

6-WDFN Exposed Pad

Width :

2mm

Transistor Application :

SWITCHING

Number of Elements :

2

JESD-609 Code :

e3

Number of Terminations :

6

Mounting Type :

Surface Mount

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Weight :

9.695537mg

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Continuous Drain Current (ID) :

5A

Length :

2mm

Transistor Element Material :

SILICON

Base Part Number :

CSD85301

Fall Time (Typ) :

15 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Channels :

2

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

Drain-source On Resistance-Max :

0.039Ohm

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

10V

REACH SVHC :

No SVHC

Contact Plating :

Tin

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

FET Feature :

Logic Level Gate, 5V Drive

Thickness :

750μm

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V