CSD85301Q2T
- Mfr.Part #
- CSD85301Q2T
- Manufacturer
- Texas Instruments
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 5A 6WSON
- Stock
- 17,483
- In Stock :
- 17,483
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate Charge (Qg) (Max) @ Vgs :
- 5.4nC @ 4.5V
- Rise Time :
- 26ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 2.3W
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- 900mV
- Element Configuration :
- Dual
- Avalanche Energy Rating (Eas) :
- 3.8 mJ
- Turn-Off Delay Time :
- 14 ns
- Package / Case :
- 6-WDFN Exposed Pad
- Width :
- 2mm
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Weight :
- 9.695537mg
- FET Type :
- 2 N-Channel (Dual)
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 5A
- Length :
- 2mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- CSD85301
- Fall Time (Typ) :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 6 ns
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Number of Channels :
- 2
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- NexFET™
- Drain-source On Resistance-Max :
- 0.039Ohm
- Drain to Source Breakdown Voltage :
- 20V
- Gate to Source Voltage (Vgs) :
- 10V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- FET Feature :
- Logic Level Gate, 5V Drive
- Thickness :
- 750μm
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 5A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 469pF @ 10V
- Datasheets
- CSD85301Q2T

CSD85301Q2T datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD85301Q2T Description
The CSD85301Q2T is a 20 V, 23 mQ N-Channel device with two different MOSFETs that is housed in a SON 2 x 2 mm plastic container. The two FETs were designed with synchronous buck applications and other power supply usage in mind, as well as a half bridge configuration. Additionally, this component can be used in adapter, USB input protection, and battery charging applications. The twin FETs' low drain to source on-resistance lowers losses and offers a reduced component count for applications with restricted space.
CSD85301Q2T Features
?Low On Resistance
?Dual MOSFETs with separate operation
?SON 2*2 mm Space-Saving Plastic Package
?Works best when used with a 5 V gate driver.
?Avalanches Rated
?Pb and Halogen Free
? RoHS-compliant
CSD85301Q2T Applications
? The f-Load Synchronous Buck Converier for Network Applications! Systems for computers, telephones, and networks
? USB input security for notebooks and tablets
? Power Supply Security
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