CSD85301Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Threshold Voltage :

900mV

Pbfree Code :

yes

Turn-Off Delay Time :

14 ns

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

10V

REACH SVHC :

No SVHC

Turn On Delay Time :

6 ns

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Avalanche Energy Rating (Eas) :

3.8 mJ

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

15 ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Package / Case :

6-WDFN Exposed Pad

Drain Current-Max (Abs) (ID) :

5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Pins :

6

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Length :

2mm

Width :

2mm

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD85301

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.039Ohm

Factory Lead Time :

12 Weeks

Weight :

9.695537mg

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Thickness :

750μm

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate, 5V Drive

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Max Power Dissipation :

2.3W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rise Time :

26ns

Continuous Drain Current (ID) :

5A

Element Configuration :

Dual