CSD85301Q2T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

NO LEAD

Number of Terminations :

6

Turn On Delay Time :

6 ns

Gate to Source Voltage (Vgs) :

10V

Width :

2mm

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

NexFET™

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.039Ohm

Fall Time (Typ) :

15 ns

Max Power Dissipation :

2.3W

Rise Time :

26ns

Additional Feature :

AVALANCHE RATED

Number of Pins :

6

FET Type :

2 N-Channel (Dual)

Length :

2mm

Threshold Voltage :

900mV

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Weight :

9.695537mg

Mount :

Surface Mount

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Base Part Number :

CSD85301

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

469pF @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-WDFN Exposed Pad

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Avalanche Energy Rating (Eas) :

3.8 mJ

Turn-Off Delay Time :

14 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Number of Channels :

2

Drain Current-Max (Abs) (ID) :

5A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Thickness :

750μm

FET Feature :

Logic Level Gate, 5V Drive

Continuous Drain Current (ID) :

5A

Rds On (Max) @ Id, Vgs :

27m Ω @ 5A, 4.5V

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE