CSD87503Q3ET

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Feedback Cap-Max (Crss) :

194 pF

Power - Max :

15.6W

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

17.4nC @ 4.5V

Width :

3.3mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain Current-Max (Abs) (ID) :

10A

JESD-609 Code :

e4

FET Type :

2 N-Channel (Dual) Common Source

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Number of Pins :

8

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Package / Case :

8-PowerVDFN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Configuration :

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Number of Elements :

2

Length :

3.3mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mounting Type :

Surface Mount

Base Part Number :

CSD87503

Operating Temperature :

-55°C~150°C TJ

Thickness :

1mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

13.5mOhm

Case Connection :

DRAIN