BSS63T116

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Mfr.Part #
BSS63T116
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 100V 0.1A SST3
Stock
6,057
In Stock :
6,057

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Transistor Type :
PNP
Transistor Application :
AMPLIFIER
Configuration :
Single
Transition Frequency :
200MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Polarity/Channel Type :
PNP
JESD-30 Code :
R-PDSO-G3
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 1V
Surface Mount :
yes
Current - Collector Cutoff (Max) :
100nA ICBO
Current - Collector (Ic) (Max) :
100mA
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Power - Max :
350mW
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
200MHz
Voltage - Collector Emitter Breakdown (Max) :
100V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
BSS63T116
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor BSS63T116 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, BSS63T116 pinout, BSS63T116 datasheet PDF, BSS63T116 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor BSS63T116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BSS63T116


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BSS63T116 Overview


In this device, the DC current gain is 30 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 100V.

BSS63T116 Features


the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
a transition frequency of 200MHz


BSS63T116 Applications


There are a lot of ROHM Semiconductor
BSS63T116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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